A Review on the Physics of Semiconductors and Their Modern Applications

Mehendale S and Biswas S

Published on: 2026-02-02

Abstract

This study offers a thorough examination of the solid-state physics principles that regulate semiconductors and their application in contemporary device technologies. We elucidate the quantum mechanical framework, encompassing Band Theory, the concept of Effective Mass, and the statistical mechanics that govern carrier concentrations (Fermi-Dirac distribution). A comprehensive examination of transport mechanisms encompasses both linear drift-diffusion and high-field effects, ess ential for device modeling. The primary discourse on the device focuses on the electrostatics of the p-n junction and the modeling of the MOSFET, thoroughly examining the shift from planar to Gate-All-Around (GAA) designs necessary to alleviate Short-Channel Effects (SCEs). The applications part integrates the physics of Microelectronics (NAND Flash tunneling), high-efficiency Optoelectronics (the ABC model and efficiency droop in GaN, and next-generation Wide Bandgap (WBG) Power Electronics (Baliga’s figure of merit). The research finishes with an optimistic outlook for surpassing the Boltzmann limit through technologies such as TFETs and the essential advancement of silicon-based quantum qu-bits and neuromorphic hardware.