Structural, Morphological and Optical Properties of V2O5 Using 20 KeV He+ Ion Implantation

Vandana P, Shah DR, Taparia YA, Kachwala TS, Biswas S and Thakur A

Published on: 2024-10-05

Abstract

This study examines the structural, morphological, and optical modifications that occur in V₂O₅ thin films as a result of 20 keV He⁺ implantation at varying fluences. The orthorhombic crystalline structure of the V₂O₅ thin films is maintained across all ion fluences, as evidenced by X-ray diffraction (XRD) analysis. A modest increase in crystallinity is observed at the highest fluence of 1x10¹? ions/cm², despite a minor reduction in crystallite size. FTIR peaks that are more defined and sharper, particularly for the V=O and V-O-V bonds, are indicative of a more ordered structure, which is consistent with the increased crystallinity. Nevertheless, atomic force microscopy (AFM) demonstrates a counterintuitive trend in surface roughness: an initial increase at 1x10¹² ions/cm², which is likely the result of defect formation, is followed by a decrease at 1x10¹? ions/cm², which suggests densification that further smoothens the surface. The optical band gap of the films is essentially unaffected by varying ion fluence, despite these structural and morphological changes. These findings highlight the complex balance between ion fluence, thermal treatment, and defect formation in tailoring the properties of V₂O₅ thin films, with implications for their application in electronic and optoelectronic devices.

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