The widely using of multilayer structures for manufacturing of solid-state electronics devices leads to the necessity to improve the properties of their constituent epitaxial layers. In the present time several technological processes are using for growth multilayer structures: molecular beam epitaxy, from gas phase, and magnetron sputtering are used to form multilayer structures. A large number of works are considered growth and using of hetero structures due to their wide spreading [1-10]. It is known that hetero structures have mismatch-induced stress due to mismatch of the crystal lattice constants. In this paper we consider a possibility to decrease mismatch-induced stress due to radiation processing of substrate before growth of epitexial layers. After that we consider hetero structure during its growth in a reactor from gas phase (see Figure 1). At the same time an analytical approach for analysis of mass and heat transport is introduced. The approach gives a possibility to take into account simultaneously spatial and temporal changes of the parameters of mass transfer. The approach gives also a possibility to take into account nonlinearity of the considered processes.

Figure 1a: Structure of reactor for gas phase epitaxy with sloping keeper of sub-strate.

Figure 1b: View from side of keeper of substrate and approximation of the keeper by sloping lines with angle of sloping j_1.

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