Structural Changes of 4H-Sic In Excimer Laser Doping

Mizoguchi H

Published on: 2021-09-02

Abstract

To understand the mechanism of laser doping by the KrF excimer laser, we experimentally evaluated the structural changes of 4H-SiC in the doping-capable region (the region where does not occur ablation and the temperature does not exceed the peritectic temperature). In the previous report [5], the calculation result assuming that the crystal state of SiC may change due to laser irradiation even in the doping-capable region was reported. In this work, we experimentally confirmed the need for a new model that includes state changes due to photomechanical reactions in addition to photothermal and photochemical reactions.